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Semiconductor and Electronics

Global Gate Driver IC Market Size, Growth & Outlook

Global Gate Driver IC Market Size, Growth & Outlook
REPORT ID: FMI-0333 || VIEW: 62

Global Gate Driver IC Market by Transistor Type (MOSFET and IGBT), Semiconductor Material (SIC and GaN), Mode of Attachment (On-chip and Discrete), Isolation Technique (Magnetic isolation, Capacitive isolation, and Optical isolation), and Application (Residential, Industrial, and Commercial): Global Opportunity Analysis and Industry Forecast, 2021 - 2028

  • Report description
  • Table of Content

A gate driver IC is an integrated circuit chip, which is used in controlling power dissipation, current flow, heat flow, and initiates smooth switching actions in high-power transistor gates, such as MOSFET and IGBT. It can be provided either on-chip or as a discrete module and consists of a level shifter in combination with an amplifier.

 

As every transistor requires a particular gate voltage to switch on, the gate capacitor must be charged to at least the required gate voltage for the transistor to be switched on. This voltage is controlled by its driver IC. Similarly, the heat dissipation current through the transistors can be controlled by the use of driver ICs.

 

North America contributes a smaller amount in gate driver IC market, however, the development in the energy & power industry and adoption of advanced technology boosts the market growth. Moreover, the use of power MOSFET in consumer electronics and electric vehicles is expected to drive the market growth during the forecast period. In addition, surge in adoption of power modules is a major factor that contributes toward the growth of the market. Gate driver ICs are widely used in number of electronic applications in North America, which is expected to further drive the growth of the market.

 

The growth of the global gate driver ICs market is further driven by upsurge in adoption of smart home & smart grid technologies and increase in need for high-voltage operating devices are expected to drive the growth of the market in the near future. However, design complexities of gate driver ICs act as major barriers and hamper the market growth. Conversely, factors such as and rapid electrifications of automobiles and surge of power transistors in various renewable energy system are expected to offer lucrative opportunities for the market globally.

 

The global gate driver IC market is analyzed by transistor type, semiconductor material, by mode of attachment, isolation technique, application, and region. On the basis of transistor type, the market is categorized into MOSFET and IGBT. By semiconductor material, it is divided into SIC and GAN. Depending on mode of attachment, it is bifurcated into on-chip and discrete. Based on isolation technique, it is segregated into magnetic isolation, capacitive isolation, and optical isolation. The applications covered in the study include residential, industrial, and commercial. Region wise, the market is analyzed across North America, Europe, Asia-Pacific, and LAMEA along with their prominent countries.

 

The key players profiled in the report include Infineon Technologies, NXP Semiconductors, Renesas Electronics, STMicroelectronics, Toshiba, Texas Instrument, ROHM Semiconductors, Mitsubishi Electric Corporation, ON Semiconductor, and Semtech.
These key players have adopted strategies such as product portfolio expansion, mergers & acquisitions, agreements, geographical expansion, and collaborations to enhance their market penetration.

 

KEY BENEFITS FOR STAKEHOLDERS
• This study includes the analytical depiction of the global gate driver IC along with the current trends and future estimations to determine the imminent investment pockets.
• The report presents information regarding the key drivers, restraints, and opportunities.
• The current market is quantitatively analyzed from 2021 to 2028 to highlight the financial competency of the industry.
• Porter’s five forces analysis illustrates the potency of the buyers and suppliers in the industry.

 

GLOBAL GATE DRIVER IC MARKET SEGMENTATION
BY TRANSISTOR TYPE

• MOSFET
• IGBT

 

BY SEMICONDUCTOR MATERIAL
• SIC
• GAN

 

BY MODE OF ATTACHMENT
• On-chip
• Discrete

 

BY ISOLATION TECHNIQUE
• Magnetic isolation
• Capacitive isolation
• Optical isolation

 

BY APPLICATION
• Residential
• Industrial
• Commercial

 

BY REGION
• North America
o U.S.
o Canada
o Mexico
• Europe
o Germany
o France
o UK
o Rest of Europe

• Asia-Pacific
o Japan
o China
o South Korea
o Rest of Asia-Pacific
• LAMEA
o Latin America
o Middle East
o Africa

Chapter: 1: INTRODUCTION

1.1. Report description
1.2. Key benefits for stakeholders
1.3. Key market segments
1.4. Research methodology

1.4.1. Primary research
1.4.2. Secondary research
1.4.3. Analyst tools and models

Chapter: 2: EXECUTIVE SUMMARY

2.1. CXO perspective

Chapter: 3: MARKET OVERVIEW

3.1. Market definition and scope
3.2. Key findings

3.2.1. Top impacting factors
3.2.2. Top investment pockets
3.2.3. Top winning strategies

3.3. Porter’s five forces analysis
3.4. Market share analysis (2020)
3.5. Market dynamics

3.5.1. Drivers

3.5.1.1. Growth in adoption of smart home and smart grid technologies
3.5.1.2. Increase in need for high voltage devices

3.5.2. Restraint

3.5.2.1. Design complexities of gate driver ICs

3.5.3. Opportunities

3.5.3.1. Rapid electrification of automobiles
3.5.3.2. Surge in power transistors in various renewable energy system

Chapter: 4: GATE DRIVER IC MARKET, BY TRANSISTOR TYPE

4.1. Overview
4.2. MOSFET

4.2.1. Key market trends, growth factors and opportunities
4.2.2. Market size and forecast, by region
4.2.3. Market analysis by country

4.3. IGBT

4.3.1. Key market trends, growth factors, and opportunities
4.3.2. Market size and forecast, by region
4.3.3. Market analysis by country

Chapter: 5: GATE DRIVER IC MARKET, BY SEMICONDUCTOR MATERIAL

5.1. Overview
5.2. SiC

5.2.1. Key market trends, growth factors and opportunities
5.2.2. Market size and forecast, by region
5.2.3. Market analysis by country

5.3. GaN

5.3.1. Key market trends, growth factors, and opportunities
5.3.2. Market size and forecast, by region
5.3.3. Market analysis by country

Chapter: 6: GATE DRIVER IC MARKET, BY MODE OF ATTACHMENT

6.1. Overview
6.2. On chip

6.2.1. Key market trends, growth factors and opportunities
6.2.2. Market size and forecast, by region
6.2.3. Market analysis by country

6.3. Discrete

6.3.1. Key market trends, growth factors, and opportunities
6.3.2. Market size and forecast, by region
6.3.3. Market analysis by country

Chapter: 7: GATE DRIVER IC MARKET, BY ISOLATION TECHNIQUE

7.1. Overview
7.2. Magnetic Isolation

7.2.1. Key market trends, growth factors and opportunities
7.2.2. Market size and forecast, by region
7.2.3. Market analysis by country

7.3. Capacitive Isolation

7.3.1. Key market trends, growth factors, and opportunities
7.3.2. Market size and forecast, by region
7.3.3. Market analysis by country

7.4. Optical Isolation

7.4.1. Key market trends, growth factors, and opportunities
7.4.2. Market size and forecast, by region
7.4.3. Market analysis by country

Chapter: 8: GATE DRIVER IC MARKET, BY APPLICATION

8.1. Overview
8.2. Residential

8.2.1. Key market trends, growth factors and opportunities
8.2.2. Market size and forecast, by region
8.2.3. Market analysis by country

8.3. Industrial

8.3.1. Key market trends, growth factors, and opportunities
8.3.2. Market size and forecast, by region
8.3.3. Market analysis by country

8.4. Commercial

8.4.1. Key market trends, growth factors, and opportunities
8.4.2. Market size and forecast, by region
8.4.3. Market analysis by country

Chapter: 9: GATE DRIVER IC MARKET, BY REGION

9.1. Overview
9.2. North America

9.2.1. Key market trends, growth factors, and opportunities
9.2.2. Market size and forecast, by transistor type
9.2.3. Market size and forecast, by semiconductor material
9.2.4. Market size and forecast, by mode of attachment
9.2.5. Market size and forecast, by isolation technique
9.2.6. Market size and forecast, by application
9.2.7. Market analysis by country

9.2.7.1. U.S.

9.2.7.1.1. Market size and forecast, by transistor type
9.2.7.1.2. Market size and forecast, by semiconductor material
9.2.7.1.3. Market size and forecast, by mode of attachment
9.2.7.1.4. Market size and forecast, by isolation technique
9.2.7.1.5. Market size and forecast, by application

9.2.7.2. Canada

9.2.7.2.1. Market size and forecast, by transistor type
9.2.7.2.2. Market size and forecast, by semiconductor material
9.2.7.2.3. Market size and forecast, by mode of attachment
9.2.7.2.4. Market size and forecast, by isolation technique
9.2.7.2.5. Market size and forecast, by application

9.2.7.3. Mexico

9.2.7.3.1. Market size and forecast, by transistor type
9.2.7.3.2. Market size and forecast, by semiconductor material
9.2.7.3.3. Market size and forecast, by mode of attachment
9.2.7.3.4. Market size and forecast, by isolation technique
9.2.7.3.5. Market size and forecast, by application

9.3. Europe

9.3.1. Key market trends, growth factors, and opportunities
9.3.2. Market size and forecast, by transistor type
9.3.3. Market size and forecast, by semiconductor material
9.3.4. Market size and forecast, by mode of attachment
9.3.5. Market size and forecast, by isolation technique
9.3.6. Market size and forecast, by application
9.3.7. Market analysis by country

9.3.7.1. UK

9.3.7.1.1. Market size and forecast, by transistor type
9.3.7.1.2. Market size and forecast, by semiconductor material
9.3.7.1.3. Market size and forecast, by mode of attachment
9.3.7.1.4. Market size and forecast, by isolation technique
9.3.7.1.5. Market size and forecast, by application

9.3.7.2. Germany

9.3.7.2.1. Market size and forecast, by transistor type
9.3.7.2.2. Market size and forecast, by semiconductor material
9.3.7.2.3. Market size and forecast, by mode of attachment
9.3.7.2.4. Market size and forecast, by isolation technique
9.3.7.2.5. Market size and forecast, by application

9.3.7.3. France

9.3.7.3.1. Market size and forecast, by transistor type
9.3.7.3.2. Market size and forecast, by semiconductor material
9.3.7.3.3. Market size and forecast, by mode of attachment
9.3.7.3.4. Market size and forecast, by isolation technique
9.3.7.3.5. Market size and forecast, by application

9.3.7.4. Rest of Europe

9.3.7.4.1. Market size and forecast, by transistor type
9.3.7.4.2. Market size and forecast, by semiconductor material
9.3.7.4.3. Market size and forecast, by mode of attachment
9.3.7.4.4. Market size and forecast, by isolation technique
9.3.7.4.5. Market size and forecast, by application

9.4. Asia-Pacific

9.4.1. Key market trends, growth factors, and opportunities
9.4.2. Market size and forecast, by transistor type
9.4.3. Market size and forecast, by semiconductor material
9.4.4. Market size and forecast, by mode of attachment
9.4.5. Market size and forecast, by isolation technique
9.4.6. Market size and forecast, by application
9.4.7. Market analysis by country

9.4.7.1. China

9.4.7.1.1. Market size and forecast, by transistor type
9.4.7.1.2. Market size and forecast, by semiconductor material
9.4.7.1.3. Market size and forecast, by mode of attachment
9.4.7.1.4. Market size and forecast, by isolation technique
9.4.7.1.5. Market size and forecast, by application

9.4.7.2. Japan

9.4.7.2.1. Market size and forecast, by transistor type
9.4.7.2.2. Market size and forecast, by semiconductor material
9.4.7.2.3. Market size and forecast, by mode of attachment
9.4.7.2.4. Market size and forecast, by isolation technique
9.4.7.2.5. Market size and forecast, by application

9.4.7.3. South Korea

9.4.7.3.1. Market size and forecast, by transistor type
9.4.7.3.2. Market size and forecast, by semiconductor material
9.4.7.3.3. Market size and forecast, by mode of attachment
9.4.7.3.4. Market size and forecast, by isolation technique
9.4.7.3.5. Market size and forecast, by application

9.4.7.4. Rest of Asia-Pacific

9.4.7.4.1. Market size and forecast, by transistor type
9.4.7.4.2. Market size and forecast, by semiconductor material
9.4.7.4.3. Market size and forecast, by mode of attachment
9.4.7.4.4. Market size and forecast, by isolation technique
9.4.7.4.5. Market size and forecast, by application

9.5. LAMEA

9.5.1. Key market trends, growth factors, and opportunities
9.5.2. Market size and forecast, by transistor type
9.5.3. Market size and forecast, by semiconductor material
9.5.4. Market size and forecast, by mode of attachment
9.5.5. Market size and forecast, by isolation technique
9.5.6. Market size and forecast, by application
9.5.7. Market analysis by country

9.5.7.1. Latin America

9.5.7.1.1. Market size and forecast, by transistor type
9.5.7.1.2. Market size and forecast, by semiconductor material
9.5.7.1.3. Market size and forecast, by mode of attachment
9.5.7.1.4. Market size and forecast, by isolation technique
9.5.7.1.5. Market size and forecast, by application

9.5.7.2. Middle East

9.5.7.2.1. Market size and forecast, by transistor type
9.5.7.2.2. Market size and forecast, by semiconductor material
9.5.7.2.3. Market size and forecast, by mode of attachment
9.5.7.2.4. Market size and forecast, by isolation technique
9.5.7.2.5. Market size and forecast, by application

9.5.7.3. Africa

9.5.7.3.1. Market size and forecast, by transistor type
9.5.7.3.2. Market size and forecast, by semiconductor material
9.5.7.3.3. Market size and forecast, by mode of attachment
9.5.7.3.4. Market size and forecast, by isolation technique
9.5.7.3.5. Market size and forecast, by application

Chapter: 10: COMPANY PROFILE

10.1. INFINEON TECHNOLOGIES AG

10.1.1. Company overview
10.1.2. Company snapshot
10.1.3. Operating business segments
10.1.4. Product portfolio
10.1.5. Business performance
10.1.6. Key strategic moves and developments

10.2. MITSUBISHI ELECTRIC CORPORATION

10.2.1. Company overview
10.2.2. Company snapshot
10.2.3. Operating business segments
10.2.4. Product portfolio
10.2.5. Business performance

10.3. NXP SEMICONDUCTOR

10.3.1. Company overview
10.3.2. Company snapshot
10.3.3. Product portfolio
10.3.4. Product portfolio
10.3.5. Business performance
10.3.6. Key strategic moves and developments

10.4. ON SEMICONDUCTOR

10.4.1. Company overview
10.4.2. Company snapshot
10.4.3. Operating business segments
10.4.4. Product portfolio
10.4.5. Business performance

10.5. ROHM SEMICONDUCTORS

10.5.1. Company overview
10.5.2. Company snapshot
10.5.3. Operating business segments
10.5.4. Product portfolio
10.5.5. Business performance
10.5.6. Key strategic moves and developments

10.6. RENESAS ELECTRONICS

10.6.1. Company overview
10.6.2. Company snapshot
10.6.3. Operating business segments
10.6.4. Product portfolio
10.6.5. Business performance
10.6.6. Key strategic moves and developments

10.7. STMICROELECTRONICS

10.7.1. Company overview
10.7.2. Company snapshot
10.7.3. Operating business segments
10.7.4. Business performance
10.7.5. Key strategic moves and developments

10.8. SEMTECH CORPORATION

10.8.1. Company overview
10.8.2. Company snapshot
10.8.3. Operating business segments
10.8.4. Product portfolio
10.8.5. Business performance

10.9. TEXAS INSTRUMENTS

10.9.1. Company overview
10.9.2. Company snapshot
10.9.3. Operating business segments
10.9.4. Product portfolio
10.9.5. Business performance
10.9.6. Key strategic moves and developments

10.10. TOSHIBA CORPORATION (TOSHIBA TEC CORPORATION)

10.10.1. Company overview
10.10.2. Company snapshot
10.10.3. Operating business segments
10.10.4. Product portfolio
10.10.5. Business performance
10.10.6. Key strategic moves and developments

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